Based on the mechanism of film growth in IBAD, it is demonstrated that the energetics and the inertness of the assisting ions are crucial for the in-plane textured microstructures of the depositing YSZ films, the size and the mass of assisting ion beam being not. When the O+ ion beam energy is increased to 500 eV and an electrode of electrons is placed in the path of the O+ ion beam to neutralize the O+ ions, the textured YSZ buffer layer on stainless steel substrate can be obtained. Then, a high critical current density and in-pla...
