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Electronic structure of Si-C alloys

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成果类型:
期刊论文
作者:
LI, YP*;ZHANG, HF;HUANG, XT
通讯作者:
LI, YP
作者机构:
UNIV SCI & TECHNOL CHINA,DEPT MAT SCI & ENGN,HEFEI 230026,PEOPLES R CHINA.
HUAZHONG NORMAL UNIV,DEPT PHYS,WUHAN 430070,PEOPLES R CHINA.
UNIV SCI & TECHNOL CHINA,STRUCT RES LAB,HEFEI 230026,PEOPLES R CHINA.
[LI, YP] UNIV SCI & TECHNOL CHINA,DEPT PHYS,HEFEI 230026,PEOPLES R CHINA.
通讯机构:
[LI, YP] U
UNIV SCI & TECHNOL CHINA,DEPT PHYS,HEFEI 230026,PEOPLES R CHINA.
语种:
英文
关键词:
Si-C合金;电子结构;模型;碳含量
期刊:
中国物理快报:英文版
ISSN:
0256-307X
年:
1994
卷:
11
期:
11
页码:
689-692
机构署名:
本校为其他机构
院系归属:
物理科学与技术学院
摘要:
We have systematically studied the electronic structure of the ordered Si-C alloys, fourteen models were created according to the different carbon contents. The linear muffin-tin orbitals method was used to calculate their energy band informations. The functional relation of band gap upon carbon contents conflicts with the point of view of Soref [J. Appl. Phys. Lett. 56 (1990) 734], but agrees well with that of Alexander's [Phys. ...

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