期刊论文

Dong Wang<&wdkj&>Shi-Qiang Zhou

英文

核技术(英文版)

1001-8042

2022

33

11

10-20

10.1007/s41365-022-01128-5

supported by the National Natural Science Foundation of China （No.U1932143）； the National Key Research and Development Program of China （No. 2020YFE0202002）； the National Natural Science Foundation of China （Nos. 11875146,11927901, 12075099, 12075100, 11875145, U2032209）； the Strategic Priority Research Program of Chinese Academy of Sciences（No. XDB34000000）；

本校为第一机构

The single-event effect (SEE) is a serious threat to electronics in radiation environments. The most important issue in radiation-hardening studies is the localization of the sensitive region in electronics to the SEE. To solve this problem, a prototype based on a complementary metal oxide semiconductor (CMOS) pixel sensor, i.e., Topmetal-M, was designed for SEE localization. A beam test was performed on the prototype at the radiation terminal of the Heavy Ion Research Facility in Lanzhou (HIRFL). The results indicated that the inherent deflection angle of the prototype to the beam was 1.7 ...