[Zhu, Sicong; Liu, Fangqi] Wuhan Univ Sci & Technol, Coll Sci, Hubei Prov Key Lab Syst Sci Met Proc, State Key Lab Refractories & Met, Wuhan 430081, Peoples R China.

[Wu, Jian; Shu, Bowang; Deng, Haiqin; Yu, Qiang; Liu, Fangqi] Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Peoples R China.

[Yu, Qiang] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Jiangsu, Peoples R China.

[Yu, Qiang] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanophoton Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China.

[Wu, Jian; Xue, Junfei] Fudan Univ, Dept Chem, Shanghai Key Lab Mol Catalysts & Innovat Mat, Shanghai 200433, Peoples R China.

[Jian Wang; Sicong Zhu] H

[Jian Wu] C

Hubei Province Key Laboratory of Systems Science in Metallurgical Process, College of Science, The State Key Laboratory for Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China<&wdkj&>Key Laboratory of Metallurgical Equipment and Control Technology, Key Laboratory of Mechanical Transmission and Manufacturing Engineering, Wuhan University of Science and Technology, Wuhan 430081, China<&wdkj&>Helmholtz Institute Ulm, Ulm D89081, Germany<&wdkj&>College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China<&wdkj&>Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysts and Innovative Materials, Fudan University, Shanghai 200433, China

Energy gap;Field effect transistors;'current;Bimetallic alloys;Broadband absorption;Direct band gap semiconductors;Electrons energy;Energy transitions;Indirect band gap;Photonics devices;Primary materials;X factors;Photonic devices

物理科学与技术学院