Si nanowires have been synthesized by a novel oxide-assistant growth mechanism using boron powder and silicon oxide as reactants. Their structures and morphologies have been investigated using X-ray diffraction, scanning and transmission electron microscopy, energy-dispersive X-ray spectroscopy, and electron energy loss spectroscopy. The obtained nanowire consists of a single-crystalline Si core and a very thin amorphous boron oxide layer. Photoluminescence investigations reveal that the Si nanowires possess a broad red emission band. The outside amorphous oxide layer plays an important role f...
