A solution to nanocrystalline InNbO4 as a photocatalytically active ternary metal oxide semiconductor was presented, which involved the reaction of two chemically different precursors. The reaction temperature was kept at 200°C and the photocatalysis was characterized by high crystallininty and a high surface area of 54 m2g-1. The volume-weighted average crystallite size was calculated as 27.7 nm. Nitrogen sorption measurements were applied to determine the surface area of the InNbO4nanoparticles. A type IV adsorption-desorption isotherm was f...
