We acknowledge the financial support from the National Natural Science Foundation of China (Grant Nos. 51572102 and 51972133).
机构署名：
本校为第一且通讯机构
院系归属：
物理科学与技术学院
摘要：
The state-of-the-art perovskite solar cells (PSCs) with SnO2 electron transporting material (ETL) layer displays the probability of conquering the low electron mobility and serious leakage current loss of the TiO2 ETL layer in photoelectronic devices. The rapid development of SnO2 ETL layer has brought perovskite efficiencies >20%. However, high density of defect states and voltage loss of high temperature SnO2 are still latent impediment for the long-term stability and hysteresis effect of photovoltaics. Herein, Nb5+ doped SnO2 with deeper ene...
