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Development of a Stitched Monolithic Pixel Sensor prototype (MOSS chip) towards the ITS3 upgrade of the ALICE Inner Tracking system

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成果类型:
期刊论文、会议论文
作者:
Leitao, P. Vicente;Rinella, G. Aglieri;Bugiel, S.;Cecconi, L.;de Melo, J. L. A.;...
作者机构:
[Snoeys, W.; Cecconi, L.; Hong, G. H.; Deng, W.; Rinella, G. Aglieri; de Melo, J. L. A.; Martin, A. Dorda; Dorosz, P.; Pulli, A.; Kremastiotis, I.; Leitao, P. Vicente; Piro, F.; Kugathasan, T.] CERN, Geneva, Switzerland.
[Piro, F.] Ecole Polytech Fed Lausanne, Lausanne, Switzerland.
[Deng, W.] Cent China Normal Univ, Wuhan, Peoples R China.
[Gajanana, D.; Yelkenci, A.; Gromov, V.] NIKHEF, Amsterdam, Netherlands.
[Fang, X.; Soudier, J.; Valin, I.; Morel, F.; Bugiel, S.] IPHC, Strasbourg, France.
语种:
英文
关键词:
Solid state detectors;VLSI circuits
期刊:
Journal of Instrumentation
ISSN:
1748-0221
年:
2023
卷:
18
期:
1
页码:
C01044
会议名称:
Topical Workshop on Electronics for Particle Physics (TWEPP)
会议时间:
SEP 19-23, 2022
会议地点:
Bergen, NORWAY
会议主办单位:
[Leitao, P. Vicente;Rinella, G. Aglieri;Cecconi, L.;de Melo, J. L. A.;Deng, W.;Martin, A. Dorda;Dorosz, P.;Hong, G. H.;Kremastiotis, I.;Kugathasan, T.;Piro, F.;Pulli, A.;Snoeys, W.] CERN, Geneva, Switzerland.^[Piro, F.] Ecole Polytech Fed Lausanne, Lausanne, Switzerland.^[Deng, W.] Cent China Normal Univ, Wuhan, Peoples R China.^[Gajanana, D.;Gromov, V.;Yelkenci, A.] NIKHEF, Amsterdam, Netherlands.^[Bugiel, S.;Fang, X.;Morel, F.;Soudier, J.;Valin, I.] IPHC, Strasbourg, France.^[Hong, G. H.] Yonsei Univ, Seoul, South Korea.^[De Robertis, G.;Loddo, F.] Univ Bari, Bari, Italy.^[De Robertis, G.;Loddo, F.] INFN Bari, Bari, Italy.^[Marras, D.] Univ Cagliari, Cagliari, Italy.^[Marras, D.] INFN Cagliari, Karlsruhe, Italy.^[Hodges, A.;Matthew, S.;Sedgwick, I.] STFC Rutherford Appleton Lab, Didcot, England.
出版地:
TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
出版者:
IOP Publishing Ltd
机构署名:
本校为其他机构
摘要:
The MOnolithic Stitched Sensor (MOSS) is a development prototype chip towards the ITS3 vertexing detector for the ALICE experiment at the LHC. Designed using a 65 nm CMOS Imaging technology, it aims at profiting from the stitching technique to construct a single-die monolithic pixel detector of 1.4 cm × 26 cm. The MOSS prototype is one of the prototypes developed within the CERN-EP R&D framework to learn how to make stitched wafer-scale sensors with satisfactory yield. This contribution will describe some of the design challenges of a stitched pixel sensor a...

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