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Synthesis of gallium borate nanowires

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成果类型:
期刊论文
作者:
Ding, XX*;Huang, ZX;Huang, XT;Gan, ZW;Cheng, C;...
通讯作者:
Ding, XX
作者机构:
[Ding, XX; Huang, ZX; Gan, ZW; Tang, C; Huang, XT; Cheng, C; Qi, SR] Cent China Normal Univ, Dept Phys, Wuhan 430079, Peoples R China.
通讯机构:
[Ding, XX] C
Cent China Normal Univ, Dept Phys, Wuhan 430079, Peoples R China.
语种:
英文
关键词:
A1. Characterization;A1. Crystal structure;A1. Growth models;A1. Nanostructure;B1. Borates;B1. Nanomaterials
期刊:
Journal of Crystal Growth
ISSN:
0022-0248
年:
2004
卷:
263
期:
1-4
页码:
504-509
机构署名:
本校为第一且通讯机构
院系归属:
物理科学与技术学院
摘要:
Gallium borate nanowires have been synthesized using a simple and readily scaleable solid-state reaction among boron, boron oxide and gallium oxide. The GaBO3 nanowires have diameters ranging from 90 to 150 nm and lengths of several hundreds nanometer, exhibiting a poor crystallization. After a nanoscale support catalyst Fe2O3/Al2O 3 was used as additive in the reaction, the diameters, lengths and crystallization were effectively improved. The nanowires exhibit a well-crystallized one-dimensional single-crystal structure with diameters ranging from 20 to 60 nm and lengths up to several microme...

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