Catalyst-free growth of graphene directly on dielectric substrates is a challenging work for graphene-based electronics. In this paper, a simple method to synthesize large area few layer graphene films on silicon dioxide/Si substrates by chemical vapor deposition is reported. A novel liquid carbon source (ethylene glycol) is used, without any catalysts. The obtained graphene films are characterized by Raman spectroscopy, x-ray photoelectron spectroscopy, atomic force microscopy. The field effect transistor with graphene film as channel material is fabricated, and the carrier mobility is 707 cm...
