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Near-infrared light emission from Si-rich oxynitride nanostructures

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成果类型:
期刊论文
作者:
Lin, Zewen*;Huang, Rui;Guo, Yanqing;Song, Chao;Lin, Zhenxu;...
通讯作者:
Lin, Zewen
作者机构:
[Lin, Zewen; Wang, Xiang; Song, Jie; Huang, Rui; Li, Hongliang; Zhang, Yi; Guo, Yanqing] Hanshan Normal Univ, Dept Phys & Elect Engn, Chaozhou 521041, Guangdong, Peoples R China.
[Lin, Zewen; Huang, Xintang; Huang, Rui; Song, Chao; Lin, Zhenxu] Cent China Normal Univ, Inst Nanosci & Nanotechnol, Wuhan 430079, Peoples R China.
通讯机构:
[Lin, Zewen] H
Hanshan Normal Univ, Dept Phys & Elect Engn, Chaozhou 521041, Guangdong, Peoples R China.
语种:
英文
关键词:
Chemical vapor deposition;Infrared radiation;Nanostructure fabrication;Photoelectron spectra;Plasmas;Visible light
期刊:
Optical Materials Express
ISSN:
2159-3930
年:
2014
卷:
4
期:
4
页码:
816-822
基金类别:
NSF of ChinaNational Natural Science Foundation of China (NSFC) [61274140, 61306003]; NSF of Guangdong ProvinceNational Natural Science Foundation of Guangdong Province [S2011010001853]; Project of DEGP [2012KJCX0075]
机构署名:
本校为其他机构
院系归属:
物理科学与技术学院
摘要:
Near- infrared (NIR) luminescent Si-rich oxynitride nanostructures were fabricated by very high frequency plasma enhanced chemical vapor deposition followed by thermal annealing. By increasing the annealing temperature from 600 degrees C to 1100 degrees C, the intensity of NIR emission can be remarkably improved by more than three times. Si nanocrystals (NCs) with diameters ranging from 2 nm to 4 nm are found to play a decisive role in the enhanced NIR emission. The PLE spectra indicate a band-to-band excitation process with a quantum confinement feature in Si nanocrystals. Combining with the ...

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