期刊论文

Chen, ZG

中文

无机材料学报

1000-324X

2005

20

2

367-372

10.3321/j.issn:1000-324X.2005.02.017

国家自然科学基金（20207002）教育部留学回国人员启动基金；

本校为第一且通讯机构

研究了用简单铜盐通过阴极还原氧化亚铜的电化学行为,讨论了一些工艺因素对在导电玻片上电沉积Cu2O薄膜的影响,并对所制备的Cu2O薄膜分别用台阶仪、X射线衍射仪(XRD)、扫描电镜(SEM)、X射线光电子能谱(XPS)进行表征.得到的较佳工艺条件为:电势-0.22～-0.45V(vs SCE),温度为60.C,pH值为5.5～6.0,(CHaCOO)2Cu浓度为0.015～0.04mol/L.表征结果发现,随池温的升高,晶粒尺寸从0.2μm增加到0.4μm,60.C沉积的Cu2O薄膜开始具有(111)面择优取向,Cu2O膜纯度高,薄膜表面呈网络多孔结构.

Electrochemical behavior of cuprous oxide was investigated by using the catholic reduction electrochemical method. The effects of some technological factors on Cu2O thin films electrodeposited on transparent conducting glass were also studied. Cu2O thin films were characterized by Talystep, X-ray diffraction (XRD), scanning electron microscope (SEM) and X-ray photoelectron spectroscope (XPS). The optimum technological conditions were obtained as follows: the applied potential was -0.22 ∼-0.45 V (vs SCE), bath temperature was 60°C, bath pH was 5.5-6.0 and concentration of (CH3COO)2Cu wa...