During the growth of Mo silicide induced by ion-beam-mixing (IM),the phase formation and structure translation are dependent on the activation energy supplied by ion implantation and post-annealing. When implanted with substrate heating, the growth thickness of Mo sillcide is proportional to the square root of bombarding dose(x∝(?)~(1/2)). By theoretic analysis. We found that it's growth rule is related with energy deposited density Δ_v. When Δ_v is very large,x∝(?)~(1/2). When Δ_v is small x∝(?). And the oxygen impurity diff...
