期刊论文

中文

华中师范大学学报(自然科学版)

1000-1190

2008

42

4

549-552

10.19603/j.cnki.1000-1190.2008.04.011

国家自然科学基金资助项目（60490291）.；

本校为其他机构

采用射频磁控溅射法在玻璃基片上成功地制备了(Sm)TbCo/Cr非晶垂直磁化膜,并就薄膜组分对其磁特性的影响进行了研究.部分Tb原子取代Sm以后,薄膜仍然具有较高的磁各项异性.薄膜组分为(Sm0.286Tb0.714)31Co69/Cr时,其饱和磁化强度Ms为330 emu/cm3,矫顽力为5.0 KOe;薄膜组分为(Sm0.343Tb0.657)31Co69/Cr时,其饱和磁化强度Ms为385 emu/cm3,矫顽力为4.7 KOe.薄膜组分对SmTbCo/Cr非晶垂直磁化膜的磁特性影响,可以通过对薄膜结构特性的分析得到合理的解释.

Amorphous （Sm）TbCo/Cr films with perpendicular anisotropy were successsfully prepared by r. f magnetron sputtering and the composition effecs on the magnetic properties were investigated. For Tb partially substituted with Sm, the RE-TM alloy films still possess large perpendicular anisotropy. When the composition of （Sm）TbCo/ Cr film is （Sm0.286Tb0.714）alCo69/Cr , the saturation magnetization Ms is 330 emu/cma, the coercivity is 5. 0 KOe. When the composition of （Sm）TbCo/Cr film is （Sm0.343 Tb0.657 ）31C069/Cr,the saturation magnetizat...