期刊论文

中文

电子元件与材料

1001-2028

2004

23

7

44-45

10.3969/j.issn.1001-2028.2004.07.015

湖北省科技攻关计划重点项目（2001AA101B04）；

本校为第一机构

介绍了一种ITO纳米粉的低温、易于量产的制备方法.将铟锡氢氧化物置于充满氩气的高压釜,在300℃、2 MPa的条件下就可制得5～20 nm的ITO纳米粉.用XRD、TEM分析ITO纳米粉的形貌为纺锤状,结晶状况良好,更有利于制备高致密度靶材.与其它方法相比,本方法反应条件柔和,反应温度降低了约200℃.

Nano-sized ITO powder were prepared by hydrothermal method. Placed was the indium-tin oxide in a kettle with high pressure Ar. Reaction conditions are: temperature of 300℃ and pressure of 2 MPa. The powders obtained were tested by XRD and TEM, and the result i...